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2007•Applied Physics LettersOpen access

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

A. Krier, В. М. Смирнов, P. J. Batty, Min Yin, K. T. Lai, S. I. Rybchenko, S. K. Haywood, В. И. Васильев, G. S. Gagis, V. I. Kuchinskiĭ

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Abstract

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.

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Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.

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Available abstract

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.

Key concepts: Photoluminescence, Epitaxy, Materials science, Alloy, Liquid phase, Optoelectronics, Modulation (music), Phase (matter)

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