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1961•Journal of Applied ChemistryRequires access

Formation of lead telluride films by vapour plating

E. H. Cornish

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Abstract

Abstract The interaction of tetraethyl‐lead vapour and gaseous hydrogen telluride has been investigated and the conditions found under which lead telluride mirrors can be formed. A reaction mechanism is postulated to account for the by‐products obtained. A range of conditions has been found over which lead and tellurium mirrors may be formed individually from the vapours on a mica substrate. The preparation of hydrogen telluride by a lithium aluminium hydride reaction was not very satisfactory owing to the unstable nature of the gas.

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Abstract The interaction of tetraethyl‐lead vapour and gaseous hydrogen telluride has been investigated and the conditions found under which lead telluride mirrors can be formed. A reaction mechanism is postulated to account for the by‐products obtained. A range of conditions has been found over which lead and tellurium mirrors may be formed individually from the vapours on a mica substrate. The preparation of hydrogen telluride by a lithium aluminium hydride reaction was not very satisfactory owing to the unstable nature of the gas.

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Available abstract

Abstract The interaction of tetraethyl‐lead vapour and gaseous hydrogen telluride has been investigated and the conditions found under which lead telluride mirrors can be formed. A reaction mechanism is postulated to account for the by‐products obtained. A range of conditions has been found over which lead and tellurium mirrors may be formed individually from the vapours on a mica substrate. The preparation of hydrogen telluride by a lithium aluminium hydride reaction was not very satisfactory owing to the unstable nature of the gas.

Key concepts: Lead telluride, Telluride, Tellurium, Vapours, Hydrogen, Cadmium telluride photovoltaics, Aluminium, Chemistry

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