ScholarLens Back to search
1954•Journal of The Electrochemical SocietyOpen access

Preparation and Properties of Lead Telluride

Edward L. Brady

Open full text 21 citations

Abstract

Single crystals of lead telluride, , have been prepared and their resistivity and Hall coefficients determined. Both n ‐ and p ‐type lead telluride have been produced, but they were not of high resistivity. Charge carrier concentration in every case has been . Hall mobility of n ‐ and p ‐type carriers was found to be about 2240 and 860 cm 2 /volt‐sec, respectively. Material of p ‐type was converted to n ‐type by allowing lead to diffuse into the crystal at 500°C. The value of the diffusion coefficient of Pb in at this temperature is estimated to lie between .

Open-access reader

About this research paper

What this paper is about

Single crystals of lead telluride, , have been prepared and their resistivity and Hall coefficients determined. Both n ‐ and p ‐type lead telluride have been produced, but they were not of high resistivity. Charge carrier concentration in every case has been . Hall mobility of n ‐ and p ‐type carriers was found to be about 2240 and 860 cm 2 /volt‐sec, respectively. Material of p ‐type was converted to n ‐type by allowing lead to diffuse into the crystal at 500°C. The value of the diffusion coefficient of Pb in at this temperature is estimated to lie between .

Why it matters

OpenAlex reports 21 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Single crystals of lead telluride, , have been prepared and their resistivity and Hall coefficients determined. Both n ‐ and p ‐type lead telluride have been produced, but they were not of high resistivity. Charge carrier concentration in every case has been . Hall mobility of n ‐ and p ‐type carriers was found to be about 2240 and 860 cm 2 /volt‐sec, respectively. Material of p ‐type was converted to n ‐type by allowing lead to diffuse into the crystal at 500°C. The value of the diffusion coefficient of Pb in at this temperature is estimated to lie between .

Key concepts: Lead telluride, Telluride, Electrical resistivity and conductivity, Hall effect, Materials science, Electron mobility, Charge carrier, Volt

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Preparation and Properties of Lead Telluride — Research Paper | ScholarLens