2005•Telecommunications and Radio EngineeringRequires access
Two-Level Resonant-Tunneling Diodes with Tunneling Anodes
O. V. Botsula, E. D. Prokhorov
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Abstract
A resonant-tunnelling diode with a two-level quantum well and an anode in the form of a tunnelling diode connected in the direct direction has been investigated. In this condition, the voltage-current characteristics of the diode have three region of negative differential conductivity. The generation efficiency and the frequency wave band, which is up to 1000 GHz for the parameters given in the article, have been defined for these regions.