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2011•ECS TransactionsOpen access

Miniband-Resonant-Tunneling Optoelectronic Device

Der-Feng Guo

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Abstract

The illumination effect on switching performance is presented for a triangular-barrier resonant-tunneling diode (TBRTD). In the structure center of the TBRTD, a delta-doped (d-doped) quantum well is inserted. Owing to the resonant tunneling through the miniband in the quantum well, an N-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the cap-layer conductivity and potential barrier height changeable by incident light.

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What this paper is about

The illumination effect on switching performance is presented for a triangular-barrier resonant-tunneling diode (TBRTD). In the structure center of the TBRTD, a delta-doped (d-doped) quantum well is inserted. Owing to the resonant tunneling through the miniband in the quantum well, an N-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the cap-layer conductivity and potential barrier height changeable by incident light.

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Available abstract

The illumination effect on switching performance is presented for a triangular-barrier resonant-tunneling diode (TBRTD). In the structure center of the TBRTD, a delta-doped (d-doped) quantum well is inserted. Owing to the resonant tunneling through the miniband in the quantum well, an N-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the cap-layer conductivity and potential barrier height changeable by incident light.

Key concepts: Quantum tunnelling, Resonant-tunneling diode, Diode, Optoelectronics, Quantum well, Doping, Tunnel diode, Condensed matter physics

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