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2018•Journal of SemiconductorsOpen access

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Swagata Dey, Vedatrayee Chakraborty, Bratati Mukhopadhyay, Gopa Sen

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Abstract

The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge 1− z C z on Si 1− x − y Ge x Sn y heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.

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The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge 1− z C z on Si 1− x − y Ge x Sn y heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.

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Available abstract

The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge 1− z C z on Si 1− x − y Ge x Sn y heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.

Key concepts: Quantum tunnelling, Resonant-tunneling diode, Diode, Transmission coefficient, Quantum well, Heterojunction, Condensed matter physics, Density of states

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