1973•Applied Physics LettersRequires access
Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire
George D. O’Clock, M. T. Duffy
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Abstract
Experimental results are reported on the coupling of rf energy and acoustic surface waves in aluminum nitride (AlN) on sapphire and gallium nitride (GaN) on sapphire material systems. Metallized interdigital transducers are deposited on the AlN and GaN surfaces to generate and detect the acoustic surface wave energy.