2012•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

On the emission states in MQWs of InGaN/GaN and AIGaN based SQW

J. Kumar, P. Arivazhagan, K. Baskar

Abstract

The control of emission characteristics is of great importance as more specific wavelengths for applications are in demand with respect to nitride materials. Detailed investigations have been carried out to understand the emission states in multi quantum wells (MQWs) of Indium Gallium Nitride and Single Quantum well Aluminum Gallium Nitride structures using structural and optical investigations. The effect of growth parameters including the well thickness and the composition has been investigated and will be presented in detail.

About this research paper

What this paper is about

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Indium gallium nitride, Gallium nitride, Materials science, Nitride, Optoelectronics, Quantum well, Indium, Gallium