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Ultrafast carrier dynamics in highly excited gallium nitride epilayer, indium gallium nitride/gallium nitride double heterostructure, and indium gallium nitride/gallium nitride multiple quantum well structures

Chan-Kyung Choi

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Key concepts: Gallium nitride, Indium gallium nitride, Gallium, Materials science, Heterojunction, Nitride, Indium, Optoelectronics

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Ultrafast carrier dynamics in highly excited gallium nitride epilayer, indium gallium nitride/gallium nitride double heterostructure, and indium gallium nitride/gallium nitride multiple quantum well structures — Research Paper | ScholarLens