2014•Chemical Vapor DepositionRequires access
Thin a‐SiC:H Films Formed by Remote Hydrogen Microwave Plasma CVD using Dimethylsilane and Trimethylsilane Precursors
A. M. Wróbel, A. Walkiewicz‐Pietrzykowska, Paweł Uznański
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Abstract
The effect of substrate temperature (TS) on the chemical structure, surface morphology, density, and adhesion to a substrate of a‐SiC:H films is reported. The increase in TS from 30 °C to 400 °C causes the elimination of organic moieties from the film and the formation of Si‐carbidic network. The films produced at high TS are morphologically homogeneous, dense, and strongly adhere to coatings.