2004•Electronics and Communications in Japan (Part II Electronics)Requires access

Test structure for precise measurement of MOSFET matching properties

Yoshiyuki Shimizu, Mitsuo Nakamura, Toshimasa Matsuoka, Kenji Taniguchi

Abstract

Abstract We designed a new test structure for precise measurement of MOSFET matching properties. This structure consists of a MOSFET array including over 10,000 MOSFETs for measurement, and peripheral decoder circuits to choose an MOSFET in the array. The Kelvin technique was implemented in the structure to cancel parasitic resistances of metal wiring and transmission gates in such a way that any MOSFET in the array can be measured at a precise bias condition. Accurate electrical measurements using the structure make it possible to derive the statistical variations of the threshold voltage and transconductance of MOSFETs placed on a chip. © 2004 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 87(3): 21–28, 2004; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ecjb.10178

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Key concepts: MOSFET, Transconductance, Electronic engineering, Electronic circuit, Matching (statistics), Threshold voltage, Electrical engineering, Power MOSFET