2002Unpublished venueRequires access

Characterisation of systematic MOSFET transconductance mismatch

Hans Tuinhout

Open publisher page 9 citations

Abstract

This paper presents a study on MOSFET transconductance mismatch characterisation using MOSFET pairs with intentional 1% dimensional offsets. Furthermore, a new mismatch phenomenon is introduced that is attributed to mechanical strain associated with CMP dummy tiles.

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What this paper is about

This paper presents a study on MOSFET transconductance mismatch characterisation using MOSFET pairs with intentional 1% dimensional offsets. Furthermore, a new mismatch phenomenon is introduced that is attributed to mechanical strain associated with CMP dummy tiles.

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OpenAlex reports 9 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper presents a study on MOSFET transconductance mismatch characterisation using MOSFET pairs with intentional 1% dimensional offsets. Furthermore, a new mismatch phenomenon is introduced that is attributed to mechanical strain associated with CMP dummy tiles.

Key concepts: Transconductance, MOSFET, Materials science, Electronic engineering, Optoelectronics, Electrical engineering, Engineering, Transistor

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