Design of a capacitive DAC mismatch calibrator for split SAR ADC in 65 nm CMOS
Anh Trong Huynh, Hoa Thai Duong, Hoang Viet Le, Efstratios Skafidas
Abstract
Anh Trong Huynh, Hoa Thai Duong, Hoang Viet Le, Efstratios Skafidas
Abstract
This paper presents the design and implementation of a capacitive digital to analog converter (CDAC) mismatch calibrator used in split successive approximation resistor (SAR) analog to digital converter (ADC) in a 65 nm complementary metal oxide semiconductor (CMOS) process. The calibrator adopts a compensation capacitor connected to the least significant bit (LSB) capacitor array to calibrate the mismatch between the lowest-bit capacitor of the most significant bit (MSB) array and the LSB array. An 11-bit 50-MS/s split SAR ADC using this calibrator was developed. The measurement results show that the calibration process improves the differential nonlinearity (DNL) value from −1.2/+1.9 LSBs to −0.55/+0.75 LSBs and the integral nonlinearity (INL) value from −1.9/+2.12 LSBs to −0.95/+0.99 LSBs. The calibrated ADC achieves a signal to noise and distortion ratio (SNDR) of 58.95 dB near the Nyquist frequency and an effective number of bits (ENOB) of 9.5 bits.
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This paper presents the design and implementation of a capacitive digital to analog converter (CDAC) mismatch calibrator used in split successive approximation resistor (SAR) analog to digital converter (ADC) in a 65 nm complementary metal oxide semiconductor (CMOS) process. The calibrator adopts a compensation capacitor connected to the least significant bit (LSB) capacitor array to calibrate the mismatch between the lowest-bit capacitor of the most significant bit (MSB) array and the LSB array. An 11-bit 50-MS/s split SAR ADC using this calibrator was developed. The measurement results show that the calibration process improves the differential nonlinearity (DNL) value from −1.2/+1.9 LSBs to −0.55/+0.75 LSBs and the integral nonlinearity (INL) value from −1.9/+2.12 LSBs to −0.95/+0.99 LSBs. The calibrated ADC achieves a signal to noise and distortion ratio (SNDR) of 58.95 dB near the Nyquist frequency and an effective number of bits (ENOB) of 9.5 bits.
Key concepts: Differential nonlinearity, Integral nonlinearity, Successive approximation ADC, Capacitor, Effective number of bits, CMOS, Least significant bit, 12-bit