1993•Electronics LettersRequires access
First demonstration of 60 GHz- f T , GaInP/GaAs HBT IC technology with 28 ps ECL gate delay
S.J. Prasad, B. Vetanen, C. Haynes, I. Beers, S. Park
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Abstract
A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an fT and fmax of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12.5 GHz.