1987•IEEE Electron Device LettersRequires access
A 20-GHz frequency divider implemented with heterojunction bipolar transistors
K.C. Wang, Peter M. Asbeck, Mau-Chung Frank Chang, G.J. Sullivan, D.L. Miller
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Abstract
This paper reports a high-speed frequency divider implemented with AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (HBT's). The divide-by-four static frequency divider was fabricated with a fully self-aligned dual-lift-off HBT process. A maximum operating frequency of 20.1 GHz was achieved. This is the highest frequency ever reported for static frequency dividers.