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1967•Applied Physics LettersRequires access

REFLECTIVITY THICKNESS CORRECTIONS FOR SILICON DIOXIDE FILMS ON SILICON

R. A. Wesson, Ham Young, W. A. Pliskin

Open publisher page 6 citations

Abstract

The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air-silicon dioxide and silicon dioxide-silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.

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What this paper is about

The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air-silicon dioxide and silicon dioxide-silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air-silicon dioxide and silicon dioxide-silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.

Key concepts: Silicon, Silicon dioxide, Materials science, Wavelength, Reflectivity, Interference (communication), Thin film, Optoelectronics

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