1983Journal of Applied PhysicsRequires access

Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat-treated oxygen-containing silicon

G. S. Oehrlein

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Abstract

A kinetic study of thermal donor formation in 450 °C heat-treated modern silicon crystals has been performed and it is concluded that SiO3 complexes are the dominant thermal donor species (for heat-treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.

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What this paper is about

A kinetic study of thermal donor formation in 450 °C heat-treated modern silicon crystals has been performed and it is concluded that SiO3 complexes are the dominant thermal donor species (for heat-treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.

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Available abstract

A kinetic study of thermal donor formation in 450 °C heat-treated modern silicon crystals has been performed and it is concluded that SiO3 complexes are the dominant thermal donor species (for heat-treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.

Key concepts: Silicon, Oxygen, Oxygen atom, Thermal, Chemistry, Kinetic energy, Materials science, Inorganic chemistry

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