2015•Superlattices and MicrostructuresRequires access

A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications

Behzad Ebrahimi, Mohsen Asad

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Key concepts: High-electron-mobility transistor, Figure of merit, Breakdown voltage, Materials science, Optoelectronics, Amplifier, Voltage, Channel (broadcasting)

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A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications — Research Paper | ScholarLens