2020•Journal of Computational ElectronicsRequires access

Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications

Yong Liu, Qi Yu, Jiangfeng Du

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Key concepts: High-electron-mobility transistor, Breakdown voltage, Materials science, Optoelectronics, Transistor, Figure of merit, Gallium nitride, Electric field

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