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High Speed Semiconductor Lasers For Interconnects

Badri N. Gomatam, Alfred P. De Fonzo

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Abstract

We review current techniques in modeling the semiconductor laser through the use of equivalent circuits that predict semiconductor laser performance under high frequency modulation and high speed switching conditions as well as the influence of material parameters and characteristics. Factors governing the intrinsic response of the laser are discussed. We then discuss the influence of packaging and chip parasitics on the modulation response.

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What this paper is about

We review current techniques in modeling the semiconductor laser through the use of equivalent circuits that predict semiconductor laser performance under high frequency modulation and high speed switching conditions as well as the influence of material parameters and characteristics. Factors governing the intrinsic response of the laser are discussed. We then discuss the influence of packaging and chip parasitics on the modulation response.

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Available abstract

We review current techniques in modeling the semiconductor laser through the use of equivalent circuits that predict semiconductor laser performance under high frequency modulation and high speed switching conditions as well as the influence of material parameters and characteristics. Factors governing the intrinsic response of the laser are discussed. We then discuss the influence of packaging and chip parasitics on the modulation response.

Key concepts: Parasitic extraction, Semiconductor laser theory, Laser, Modulation (music), Semiconductor, Optoelectronics, Semiconductor device, Materials science

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