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2004•Unpublished venueRequires access

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent Y-parameters

V. Cuoco, Wah-Peng Neo, L.C.N. de Vreede, H.C. de Graaff, LK Nanver, Koen Buisman, Hui-Chun Wu, H.F.F. Jos, Joachim N. Burghartz

Open publisher page 3 citations

Abstract

This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

About this research paper

What this paper is about

This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

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OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

Key concepts: Parasitic extraction, Series (stratigraphy), Semiconductor device, Bipolar junction transistor, Extraction (chemistry), Electronic engineering, Transistor, Materials science

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