2005•Unpublished venueRequires access

Simulation and experiment for high voltage high power IGCT device

Haishan Li, Yaohua Li

Abstract

To imitate the static and dynamic behavior of the integrated gate-commutated thyristor (IGCT), this paper presents a new circuit level model for this high voltage high power device, which is implemented in PSIM simulation tool. The effectiveness of this model is verified by comparing simulation with experimental results of a 4.5 kV/4 kA IGCT device.

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Available abstract

Key concepts: Integrated gate-commutated thyristor, Thyristor, High voltage, Power (physics), Voltage, Computer science, MOS-controlled thyristor, Electrical engineering