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Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode

T. S. M. Arshad, Mohd Azlishah Othman, N. Y. M. Yasin, S. N. Taib, Mohd Muzafar Ismail, Z. A. F. M. Napiah, Hamzah Asyrani Sulaiman, M. N. Hussain, Maizatul Alice Meor Said, Mohamad Harris Misran, Ridza Azri Ramlee

Open publisher page 5 citations

Abstract

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

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What this paper is about

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

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Available abstract

This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.

Key concepts: Photodiode, Optoelectronics, Gallium arsenide, Indium gallium arsenide, Materials science, Silicon, Photodetector, Indium

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