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PLANAR VAPOR GROWN INDIUM GALLIUM ARSENIDE DETECTORS WITH EXTREMELY LOW DARK CURRENT AND FAILURE RATES

G.H. Olsen, Vladimir S. Ban, G. A. Gasparian, F.D. Speer, K. M. Woodruff, G. C. Erickson

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Abstract

Indium Gallium Arsenide (InGaAs) photodetectors have been fabricated which exhibit dark current as low as 10 picoamps (−5V), quantum efficiencies as high as 35% at 850nm, 90% at 1300nm, 93% at 1550nm and failure rates below 1 in 109 hours (1 Failure unIT = 1 FIT). The devices have 75 micron diameter active regions with InP "cap" layers. Pulse response times below 35 picoseconds have also been measured.

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What this paper is about

Indium Gallium Arsenide (InGaAs) photodetectors have been fabricated which exhibit dark current as low as 10 picoamps (−5V), quantum efficiencies as high as 35% at 850nm, 90% at 1300nm, 93% at 1550nm and failure rates below 1 in 109 hours (1 Failure unIT = 1 FIT). The devices have 75 micron diameter active regions with InP "cap" layers. Pulse response times below 35 picoseconds have also been measured.

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Available abstract

Indium Gallium Arsenide (InGaAs) photodetectors have been fabricated which exhibit dark current as low as 10 picoamps (−5V), quantum efficiencies as high as 35% at 850nm, 90% at 1300nm, 93% at 1550nm and failure rates below 1 in 109 hours (1 Failure unIT = 1 FIT). The devices have 75 micron diameter active regions with InP "cap" layers. Pulse response times below 35 picoseconds have also been measured.

Key concepts: Gallium arsenide, Indium gallium arsenide, Indium arsenide, Dark current, Materials science, Optoelectronics, Picosecond, Indium

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PLANAR VAPOR GROWN INDIUM GALLIUM ARSENIDE DETECTORS WITH EXTREMELY LOW DARK CURRENT AND FAILURE RATES — Research Paper | ScholarLens