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2020•Unpublished venueRequires access

Integration and characterisation of Schottky diodes with a pre-amplifier for THz applications

Ahid S. Hajo, Oktay Yilmazoglu, Franko Küppers, Thomas Kusserow

Open publisher page 5 citations

Abstract

This contribution deals with the investigation and characterisation of fully integrated broadband Terahertz (THz) Schottky diodes using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows almost 7 times higher forward current than the metallic NW with GaAs at 0.27 V with a capacitance of 0.5 fF and a series resistance of 29 Ω. The highest calculated cut-off frequency of 10.7 THz was obtained for a NW contacted vertical InGaAs diode.

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What this paper is about

This contribution deals with the investigation and characterisation of fully integrated broadband Terahertz (THz) Schottky diodes using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows almost 7 times higher forward current than the metallic NW with GaAs at 0.27 V with a capacitance of 0.5 fF and a series resistance of 29 Ω. The highest calculated cut-off frequency of 10.7 THz was obtained for a NW contacted vertical InGaAs diode.

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Available abstract

This contribution deals with the investigation and characterisation of fully integrated broadband Terahertz (THz) Schottky diodes using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows almost 7 times higher forward current than the metallic NW with GaAs at 0.27 V with a capacitance of 0.5 fF and a series resistance of 29 Ω. The highest calculated cut-off frequency of 10.7 THz was obtained for a NW contacted vertical InGaAs diode.

Key concepts: Gallium arsenide, Indium gallium arsenide, Optoelectronics, Materials science, Terahertz radiation, Schottky diode, Nanowire, Diode

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Integration and characterisation of Schottky diodes with a pre-amplifier for THz applications — Research Paper | ScholarLens