2006•Microelectronics ReliabilityRequires access

Gate leakage properties of MOS devices with tri-layer high-k gate dielectric

Wenzhanhong Chen, J.P. Xu, P. T. Lai, Y.P. Li, Shengguo Xu

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Key concepts: Materials science, High-κ dielectric, Gate dielectric, Gate oxide, Dielectric, Leakage (economics), Time-dependent gate oxide breakdown, Equivalent oxide thickness

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