ScholarLens Back to search
2021•Unpublished venueRequires access

Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on Reliability

Shuntaro Fujii, Shohei Hamada, Tatsushi Yagi, Isao Maru, Shogo Katsuki, Toshiro Sakamoto, Atsushi Okamoto, S. Morita, Tsutomu Miyazaki

Open publisher page 5 citations

Abstract

Fluorine (F) implantation into gate poly-Si was used to incorporate F atoms in gate oxide films. Different F profiles in depth direction of gate oxide films were prepared. Enhanced segregation of F atoms at SiO2/Si interfaces was important for improvement of time dependent dielectric breakdown (TDDB) lifetime and suppression of hot carrier degradation. TDDB and low frequency noise dependences on gate length suggested that F profiles in lateral direction of gate oxide films should be cared for reliability of short channel devices.

About this research paper

What this paper is about

Fluorine (F) implantation into gate poly-Si was used to incorporate F atoms in gate oxide films. Different F profiles in depth direction of gate oxide films were prepared. Enhanced segregation of F atoms at SiO2/Si interfaces was important for improvement of time dependent dielectric breakdown (TDDB) lifetime and suppression of hot carrier degradation. TDDB and low frequency noise dependences on gate length suggested that F profiles in lateral direction of gate oxide films should be cared for reliability of short channel devices.

Why it matters

OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Fluorine (F) implantation into gate poly-Si was used to incorporate F atoms in gate oxide films. Different F profiles in depth direction of gate oxide films were prepared. Enhanced segregation of F atoms at SiO2/Si interfaces was important for improvement of time dependent dielectric breakdown (TDDB) lifetime and suppression of hot carrier degradation. TDDB and low frequency noise dependences on gate length suggested that F profiles in lateral direction of gate oxide films should be cared for reliability of short channel devices.

Key concepts: Time-dependent gate oxide breakdown, Gate oxide, Materials science, Gate dielectric, Oxide, Dielectric strength, Reliability (semiconductor), Dielectric

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on Reliability — Research Paper | ScholarLens