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Reliability Study of Split Gate Silicon Nanocrystal Flash EEPROM

Cheong Min Hong, Jane A. Yater, Sung-Taeg Kang, Horacio Gasquet, Gowrishankar Chindalore

Open publisher page 1 citations

Abstract

In this paper, we present a measurement based on biased data retention to determine the direction of charge loss. Top oxide and bottom oxide thickness can be optimized to meet long term reliability goal. A split gate nanocrystal nonvolatile memory with large program window, while demonstrating excellent data retention and program disturb characteristics is also presented.

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What this paper is about

In this paper, we present a measurement based on biased data retention to determine the direction of charge loss. Top oxide and bottom oxide thickness can be optimized to meet long term reliability goal. A split gate nanocrystal nonvolatile memory with large program window, while demonstrating excellent data retention and program disturb characteristics is also presented.

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Available abstract

In this paper, we present a measurement based on biased data retention to determine the direction of charge loss. Top oxide and bottom oxide thickness can be optimized to meet long term reliability goal. A split gate nanocrystal nonvolatile memory with large program window, while demonstrating excellent data retention and program disturb characteristics is also presented.

Key concepts: EEPROM, Data retention, Non-volatile memory, Flash memory, Nanocrystal, Reliability (semiconductor), EPROM, Materials science

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