1998•physica status solidi (a)Open access

A Scalable Bipolar Transistor Model for Circuit Simulation

J.S. Yuan, Yuxing Dai, C. S. Yeh

Abstract

A scalable bipolar transistor model for circuit simulation has been developed. The model accounts for two-dimensional effects such as emitter crowding and emitter-base sidewall injection. The model parameters are scalable and can predict the bipolar transistor parameters with different emitter widths and lengths. The scalable model is applicable for bipolar transistor at different temperatures.

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Available abstract

Key concepts: Bipolar junction transistor, Heterostructure-emitter bipolar transistor, Common emitter, Scalability, Bipolar transistor biasing, Current crowding, Transistor, Insulated-gate bipolar transistor