1980•IEEE Transactions on Electron DevicesRequires access

A new bipolar transistor—GAT

Hisao Kondo, Yoshinori Yukimoto

Abstract

A new bipolar transistor named Gate Associated Transistor (GAT) was proposed and the operating mechanisms were verified. The structure of the GAT has a unique base region consisting of an FET merged into the base of a standard bipolar transistor. The operating mechanisms and characteristics of the GAT were investigated and compared with those of standard power transistors. The most outstanding feature of the GAT was a large area for safe operation.

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Key concepts: Bipolar junction transistor, Transistor, Multiple-emitter transistor, Current injection technique, Heterostructure-emitter bipolar transistor, Static induction transistor, Power semiconductor device, Base (topology)