Da Zhang
Abstract
Based on the newly-built physical models of the transistor,the paper attempts to analyse the bias state within saturation and carriers' motional principles of the bipolar transistor,and meanwhile explains advancedly the correctness of the forward bias of the transistor-collector junction on the state.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
Based on the newly-built physical models of the transistor,the paper attempts to analyse the bias state within saturation and carriers' motional principles of the bipolar transistor,and meanwhile explains advancedly the correctness of the forward bias of the transistor-collector junction on the state.
Key concepts: Transistor, Correctness, Bipolar junction transistor, Bipolar transistor biasing, Multiple-emitter transistor, State (computer science), Heterostructure-emitter bipolar transistor, Transistor model