2002Electrochemical and Solid-State LettersRequires access

Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure

Huang‐Chung Cheng, Ching‐Wei Lin, Li‐Jing Cheng, C. H. Tseng, Ting-Kuo Chang, Yuan-Ching Peng, Wen-Tung Wang

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Abstract

Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure , Cheng, Huang-Chung, Lin, Ching-Wei, Cheng, Li-Jing, Tseng, Chang-Ho, Chang, Ting-Kuo, Peng, Yuan-Ching, Wang, Wen-Tung

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Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure , Cheng, Huang-Chung, Lin, Ching-Wei, Cheng, Li-Jing, Tseng, Chang-Ho, Chang, Ting-Kuo, Peng, Yuan-Ching, Wang, Wen-Tung

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Available abstract

Fabrication of Low-Temperature Poly-Si Thin Film Transistors with Self-Aligned Graded Lightly Doped Drain Structure , Cheng, Huang-Chung, Lin, Ching-Wei, Cheng, Li-Jing, Tseng, Chang-Ho, Chang, Ting-Kuo, Peng, Yuan-Ching, Wang, Wen-Tung

Key concepts: Materials science, Optoelectronics, Dopant Activation, Dopant, Doping, Fabrication, Thin-film transistor, Transistor

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