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1993•IEEE Transactions on Electron DevicesRequires access

Excimer-laser crystallized poly-Si TFTs with mobility of more than 600 cm/sup 2//Vs

Dong-Oun Choi, Eiichi Sadayuki Eiichi Sadayuki, Osamu Sugiura, M. Matsumura

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Abstract

The authors present excimer-laser-crystallized poly-Si TFTs (thin-film transistors) with a field-effect mobility of greater than 600 cm/sup 2//Vs, which is more than 50% higher than the best value reported to date. The TFT structure, the novel process, and the mechanism for the superior TFT performances are discussed. The results obtained indicate that reduction of heat removal rate from the molten Si layer during an excimer-laser-crystallization step is a key way to improve the performance of poly-Si TFTs on a glass substrate.

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What this paper is about

The authors present excimer-laser-crystallized poly-Si TFTs (thin-film transistors) with a field-effect mobility of greater than 600 cm/sup 2//Vs, which is more than 50% higher than the best value reported to date. The TFT structure, the novel process, and the mechanism for the superior TFT performances are discussed. The results obtained indicate that reduction of heat removal rate from the molten Si layer during an excimer-laser-crystallization step is a key way to improve the performance of poly-Si TFTs on a glass substrate.

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Available abstract

The authors present excimer-laser-crystallized poly-Si TFTs (thin-film transistors) with a field-effect mobility of greater than 600 cm/sup 2//Vs, which is more than 50% higher than the best value reported to date. The TFT structure, the novel process, and the mechanism for the superior TFT performances are discussed. The results obtained indicate that reduction of heat removal rate from the molten Si layer during an excimer-laser-crystallization step is a key way to improve the performance of poly-Si TFTs on a glass substrate.

Key concepts: Thin-film transistor, Excimer laser, Materials science, Optoelectronics, Crystallization, Substrate (aquarium), Laser, Layer (electronics)

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