M. A. Lieberman
Abstract
In plasma immersion ion implantation, a target is immersed in a plasma and a series of negative high-voltage pulses are applied to implant plasma ions into the target. We develop an approximate analytical model to determine the time-varying implantation current, the total dose, and the energy distribution of the implanted ions.
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In plasma immersion ion implantation, a target is immersed in a plasma and a series of negative high-voltage pulses are applied to implant plasma ions into the target. We develop an approximate analytical model to determine the time-varying implantation current, the total dose, and the energy distribution of the implanted ions.
Key concepts: Plasma-immersion ion implantation, Ion implantation, Plasma, Ion, Materials science, Atomic physics, Immersion (mathematics), Plasma parameters