ScholarLens Back to search
1999•Technical Physics LettersRequires access

Unstrained epitaxial InxGa1−x As films obtained on porous GaAs

F. Yu. Soldatenkov, V. P. Ulin, A. A. Yakovenko, О. М. Федорова, S. G. Konnikov, В. И. Корольков

Open publisher page 18 citations

Abstract

Epitaxial layers of InGaAs solid solutions were grown on porous GaAs(100) substrates by liquid-phase epitaxy. A comparison between the compositions and thicknesses of these epitaxial layers with those of layers obtained under the same conditions on normal monolithic GaAs substrates suggests that the crystallization of epitaxial layers on porous substrates may be considered as the growth of free unstrained films.

About this research paper

What this paper is about

Epitaxial layers of InGaAs solid solutions were grown on porous GaAs(100) substrates by liquid-phase epitaxy. A comparison between the compositions and thicknesses of these epitaxial layers with those of layers obtained under the same conditions on normal monolithic GaAs substrates suggests that the crystallization of epitaxial layers on porous substrates may be considered as the growth of free unstrained films.

Why it matters

OpenAlex reports 18 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Epitaxial layers of InGaAs solid solutions were grown on porous GaAs(100) substrates by liquid-phase epitaxy. A comparison between the compositions and thicknesses of these epitaxial layers with those of layers obtained under the same conditions on normal monolithic GaAs substrates suggests that the crystallization of epitaxial layers on porous substrates may be considered as the growth of free unstrained films.

Key concepts: Epitaxy, Materials science, Optoelectronics, Porosity, Crystallization, Liquid phase, Layer (electronics), Chemical engineering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Unstrained epitaxial InxGa1−x As films obtained on porous GaAs — Research Paper | ScholarLens