2001•SemiconductorsRequires access
Specific features of the liquid-phase epitaxial growth of SiC epilayers in vacuum
D. A. Bauman, A.V. Gavrilin, V. Ivantsov, A. M. Morozov, N.I. Kuznetsov
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Abstract
4 H -SiC epilayers were grown by a liquid-phase epitaxy in vacuum. It was found that the seed layer with steps characteristic of liquid-phase epitaxy should be preliminary deposited on the substrate. It is demonstrated that growth in a vacuum leads to a decrease in the concentration of uncompensated carriers N d – N a to the level of 2×10 16 cm −3 .