2003•Japanese Journal of Applied PhysicsOpen access

Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl2

Akihiro Matsutani, Hideo Ohtsuki, Fumio Koyama

Abstract

We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl 2 gasses at a low process temperature of 90°C. We measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. We consider that HI/Cl 2 -ICP etching is useful in InP-based device fabrication with a resist mask.

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Key concepts: Inductively coupled plasma, Dry etching, Etching (microfabrication), Fabrication, Reactive-ion etching, Plasma, Volumetric flow rate, Analytical Chemistry (journal)