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1991•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etching

J. Hommel, M. Moser, M. Geiger, Frank Scholz, H. Schweizer

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Abstract

We report on investigations of dry etching in GaInP/AlGaInP. As a method of dry etching we used CCl2F2/Ar reactive ion etching (RIE) and Ar ion beam etching (IBE). The suitability of these two methods for microstructure technology with respect to etch rates in investigated. First data on damage resulting from application of these two dry etching techniques in GaInP/AlGaInP are presented. The degree of damage was detected by performing photoluminescence measurement.

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What this paper is about

We report on investigations of dry etching in GaInP/AlGaInP. As a method of dry etching we used CCl2F2/Ar reactive ion etching (RIE) and Ar ion beam etching (IBE). The suitability of these two methods for microstructure technology with respect to etch rates in investigated. First data on damage resulting from application of these two dry etching techniques in GaInP/AlGaInP are presented. The degree of damage was detected by performing photoluminescence measurement.

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Available abstract

We report on investigations of dry etching in GaInP/AlGaInP. As a method of dry etching we used CCl2F2/Ar reactive ion etching (RIE) and Ar ion beam etching (IBE). The suitability of these two methods for microstructure technology with respect to etch rates in investigated. First data on damage resulting from application of these two dry etching techniques in GaInP/AlGaInP are presented. The degree of damage was detected by performing photoluminescence measurement.

Key concepts: Dry etching, Reactive-ion etching, Etching (microfabrication), Materials science, Ion, Ion beam, Optoelectronics, Isotropic etching

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