2004•Unpublished venueRequires access
Electron cyclotron resonance-reactive CH/sub 4//H/sub 2//Ar with constant Ar flow for high etch rate and improvement of etched surface morphology
Y. Awa, T. Ide, Taro Arakawa, Nobuo Haneji, Kohei Tada, Masakazu Sugiyama, Hiromasa Shimizu, Y. Shirnogaki, Yoshiaki Nakano
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Abstract
For etching of III-nitride materials, reactive ion etching (RIE) methods based on mixture gas such as Ch4/H2 and chloride gases are usually used. Although the etching speed of Cl2-based dry etching is usually higher than that of CH4-based dry etching, CH4-based dry etching is superior to Cl2-based dry etching from the viewpoint of being easier to handle and being less toxic and corrosive.