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1996•IEEE Transactions on Electron DevicesRequires access

Short-channel amorphous-silicon thin-film transistors

Chang‐Dong Kim, Mieko Matsumura

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Abstract

Amorphous-silicon thin film transistors (TFTs) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm/sup 2//Vs for the 15-/spl mu/m long TFT to about 0.9 cm/sup 2//Vs for the 0.5-/spl mu/m long TFT. Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics.

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What this paper is about

Amorphous-silicon thin film transistors (TFTs) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm/sup 2//Vs for the 15-/spl mu/m long TFT to about 0.9 cm/sup 2//Vs for the 0.5-/spl mu/m long TFT. Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics.

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Available abstract

Amorphous-silicon thin film transistors (TFTs) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm/sup 2//Vs for the 15-/spl mu/m long TFT to about 0.9 cm/sup 2//Vs for the 0.5-/spl mu/m long TFT. Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics.

Key concepts: Thin-film transistor, Materials science, Amorphous silicon, Optoelectronics, Transistor, Silicon, Amorphous solid, Excimer laser

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