Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the samples, regardless of the different growth time. Both X-ray diffraction and photoluminescence measurements showed that the hexagonal phase GaN was considerably incorporated in the cubic GaN layer, indicating that the hexagonal GaN is easily constructed along the (111)B facet. In contrast, window stripes opening along [01—1] direction resulted in the formation of (311)A facets and subsequently a relatively flat surface occurred as the growth proceeded. Strong emission peaks of cubic GaN were observed in the photoluminescence spectra.