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2017•The Japan Society of Applied PhysicsRequires access

Mask pattern dependence on growth of GaN using facet controlling technique by hydride vapor phase epitaxy

Kota Yukizane, Shin Goubara, Satoru Fujimoto, Tohoru Matsubara, Ryo Inomoto, Narihito Okada, Kazuyuki Tadatomo

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Key concepts: Materials science, Facet (psychology), Vapor phase, Hydride, Epitaxy, Phase (matter), Optoelectronics, Nanotechnology

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Mask pattern dependence on growth of GaN using facet controlling technique by hydride vapor phase epitaxy — Research Paper | ScholarLens