The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy
Yuanmin Du, Amit Kumar, Hui Pan, Kaiyang Zeng, Shijie Wang, Ping Yang, Andrew T. S. Wee
Abstract
Yuanmin Du, Amit Kumar, Hui Pan, Kaiyang Zeng, Shijie Wang, Ping Yang, Andrew T. S. Wee
Abstract
The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.
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The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.
Key concepts: Kelvin probe force microscope, Conductive atomic force microscopy, Microscopy, Resistive touchscreen, Photoconductive atomic force microscopy, Materials science, Electrical conductor, Atomic force microscopy