2013AIP AdvancesOpen access

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Yuanmin Du, Amit Kumar, Hui Pan, Kaiyang Zeng, Shijie Wang, Ping Yang, Andrew T. S. Wee

Open full text 50 citations

Abstract

The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.

About this research paper

What this paper is about

The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.

Why it matters

OpenAlex reports 50 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.

Key concepts: Kelvin probe force microscope, Conductive atomic force microscopy, Microscopy, Resistive touchscreen, Photoconductive atomic force microscopy, Materials science, Electrical conductor, Atomic force microscopy

Related papers

Back to paper searchBrowse research topicsOriginal source
The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy — Research Paper | ScholarLens