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First-order theory of MOSFET hybrid-mode operation

Bryan L. Hart, R.W.J. Barker

Open publisher page 10 citations

Abstract

For specified bias conditions, measurements and theory justify the first-order representation of an enhancement-mode MOS transistor operating with forward source-substrate bias (‘hybrid-mode’ operation) as a parallel combination of two non-interacting devices—an MOS transistor with zero source-substrate bias, and a bipolar junction transistor.

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What this paper is about

For specified bias conditions, measurements and theory justify the first-order representation of an enhancement-mode MOS transistor operating with forward source-substrate bias (‘hybrid-mode’ operation) as a parallel combination of two non-interacting devices—an MOS transistor with zero source-substrate bias, and a bipolar junction transistor.

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OpenAlex reports 10 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

For specified bias conditions, measurements and theory justify the first-order representation of an enhancement-mode MOS transistor operating with forward source-substrate bias (‘hybrid-mode’ operation) as a parallel combination of two non-interacting devices—an MOS transistor with zero source-substrate bias, and a bipolar junction transistor.

Key concepts: Transistor, Bipolar junction transistor, MOSFET, Mode (computer interface), Bipolar transistor biasing, Multiple-emitter transistor, Substrate (aquarium), Biasing

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