J.J. González, Dan Prager
Abstract
This paper introduces two original equations for biasing the common-emitter bipolar-junction transistor (BJT-CE) amplifier. These equations permit placing both Q-point coordinates (i.e. current and voltage) within known bounds in the presence of transistor parameter variations. An illustrative design example is provided.
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This paper introduces two original equations for biasing the common-emitter bipolar-junction transistor (BJT-CE) amplifier. These equations permit placing both Q-point coordinates (i.e. current and voltage) within known bounds in the presence of transistor parameter variations. An illustrative design example is provided.
Key concepts: Bipolar junction transistor, Biasing, Bipolar transistor biasing, Amplifier, Common emitter, Transistor, Current (fluid), Electrical engineering