Original amplifier using only emitter and base of a Si bipolar transistor
Kensho Okamoto, Jun‐ichi Fujita, M. Ishikawa, Tetsuo Hattori
Abstract
Kensho Okamoto, Jun‐ichi Fujita, M. Ishikawa, Tetsuo Hattori
Abstract
We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.
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We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.
Key concepts: Bipolar junction transistor, Common emitter, Bipolar transistor biasing, Heterostructure-emitter bipolar transistor, Amplifier, Transistor, Optoelectronics, Common source