Valence band offset of Cu2O/In2O3 heterojunction determined by X-ray photoelectron spectroscopy
Chengjun Dong, Wenhua Yu, Miao Xu, J. J. Cao, C. Chen, Wen-Zhe Yu, Y. D. Wang
Abstract
Chengjun Dong, Wenhua Yu, Miao Xu, J. J. Cao, C. Chen, Wen-Zhe Yu, Y. D. Wang
Abstract
In2O3 is a promising partner of Cu2O to form a Cu2O/In2O3 heterojunction system. We used x-ray photoelectron spectroscopy to determine the valence band offset (VBO) of a Cu2O/In2O3 heterojunction. The valence band offset is found to be 1.43 ± 0.2 eV. Given the experimental bandgaps of 2.0 eV and 2.6 eV for Cu2O and In2O3, respectively, we calculate the band alignment of a Cu2O/In2O3 heterojunction with a conduction band offset (CBO) of 0.83 ± 0.2 eV. To apply Cu2O/In2O3 bilayers in electronic devices, it is important to determine the band alignment accurately based on the VBO and CBO.
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In2O3 is a promising partner of Cu2O to form a Cu2O/In2O3 heterojunction system. We used x-ray photoelectron spectroscopy to determine the valence band offset (VBO) of a Cu2O/In2O3 heterojunction. The valence band offset is found to be 1.43 ± 0.2 eV. Given the experimental bandgaps of 2.0 eV and 2.6 eV for Cu2O and In2O3, respectively, we calculate the band alignment of a Cu2O/In2O3 heterojunction with a conduction band offset (CBO) of 0.83 ± 0.2 eV. To apply Cu2O/In2O3 bilayers in electronic devices, it is important to determine the band alignment accurately based on the VBO and CBO.
Key concepts: Heterojunction, Valence band, X-ray photoelectron spectroscopy, Band offset, Conduction band, Offset (computer science), Valence (chemistry), Materials science