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1998•Applied Physics LettersRequires access

Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface

Minxiang Pan, S.P. Wilks, P.R. Dunstan, M. Pritchard, R. H. Williams, D. S. Cammack, S. A. Clark

Open publisher page 4 citations

Abstract

In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(111)-c(2×8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by ∼0.57 eV, as compared to a negligible valence band offset for the Si/Ge(111) junction. This dramatic modification is interpreted in terms of the charge transfer at the interface.

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What this paper is about

In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(111)-c(2×8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by ∼0.57 eV, as compared to a negligible valence band offset for the Si/Ge(111) junction. This dramatic modification is interpreted in terms of the charge transfer at the interface.

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Available abstract

In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(111)-c(2×8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by ∼0.57 eV, as compared to a negligible valence band offset for the Si/Ge(111) junction. This dramatic modification is interpreted in terms of the charge transfer at the interface.

Key concepts: Heterojunction, Band offset, Valence band, Photoemission spectroscopy, Dipole, Materials science, Germanium, Condensed matter physics

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