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1993•Applied Physics LettersRequires access

Band offset variations at Ge/GaAs (100) interfaces

M. Dahmen, Uwe Rau, M. Kawanaka, J. Sone, J.H. Werner

Open publisher page 22 citations

Abstract

We analyze the band offsets at Ge/GaAs (100) interfaces by internal photoemission, capacitance/voltage and current/voltage measurements. The conduction band offset varies with Ge growth temperature from −0.025 eV for 300 °C to 0.33 eV for 500 °C. We attribute these drastic offset variations to different microscopic interface configurations at the polar Ge/GaAs (100) heterojunction.

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What this paper is about

We analyze the band offsets at Ge/GaAs (100) interfaces by internal photoemission, capacitance/voltage and current/voltage measurements. The conduction band offset varies with Ge growth temperature from −0.025 eV for 300 °C to 0.33 eV for 500 °C. We attribute these drastic offset variations to different microscopic interface configurations at the polar Ge/GaAs (100) heterojunction.

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Available abstract

We analyze the band offsets at Ge/GaAs (100) interfaces by internal photoemission, capacitance/voltage and current/voltage measurements. The conduction band offset varies with Ge growth temperature from −0.025 eV for 300 °C to 0.33 eV for 500 °C. We attribute these drastic offset variations to different microscopic interface configurations at the polar Ge/GaAs (100) heterojunction.

Key concepts: Band offset, Heterojunction, Conduction band, Materials science, Offset (computer science), Optoelectronics, Capacitance, Germanium

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