Compositional control of PbTiO3 thin films by plasma enhanced metalorganic chemical vapor deposition
Won Gyu Lee, Seong Ihl Woo, Jong Choul Kim, Soo Han Choi, Kye Hwan Oh
Abstract
Won Gyu Lee, Seong Ihl Woo, Jong Choul Kim, Soo Han Choi, Kye Hwan Oh
Abstract
PbTiO3 thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate ratio of precursors while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3 thin film showed a uniform distribution of the Pb, Ti, and C component throughout the bulk of film. When an annealing process was performed at 750 °C under the O2 ambient for 1 h, the Pb/(Pb+Ti) ratio of thin films was reduced from 0.567 to 0.509.
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PbTiO3 thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate ratio of precursors while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3 thin film showed a uniform distribution of the Pb, Ti, and C component throughout the bulk of film. When an annealing process was performed at 750 °C under the O2 ambient for 1 h, the Pb/(Pb+Ti) ratio of thin films was reduced from 0.567 to 0.509.
Key concepts: Plasma-enhanced chemical vapor deposition, Thin film, Chemical vapor deposition, Annealing (glass), Combustion chemical vapor deposition, Materials science, Analytical Chemistry (journal), Deposition (geology)